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High quality research in physical chemistry, chemical physics and biophysical chemistry.
Paper
Phys. Chem. Chem. Phys., 2006, 8, 753 - 758, DOI: 10.1039/b512780g
Setup of a scanning near field infrared microscope (SNIM): Imaging of sub-surface nano-structures in gallium-doped silicon
Jean-Sébastien Samson, Götz Wollny, Erik Bründermann, Andreas Bergner, Andreas Hecker, Gerhard Schwaab, Andreas Dirk Wieck and Martina Havenith
We have realized a scanning near-field infrared microscope in the 3–4 µm wavelength range. As a light source, a tunable high power continuous wave infrared optical parametric oscillator with an output power of up to 2.9 W in the 3–4 µm range has been set up. Using scanning near field infrared microscopy (SNIM) imaging we have been able to obtain a lateral resolution of
30 nm at a wavelength of 3.2 µm, which is far below the far-field resolution limit of 
/2. Using this 
chemical nanoscope
we could image a sub-surface structure of implanted gallium ions in a topographically flat silicon wafer giving evidence for a near-field contrast. The observed contrast is explained in terms of the effective infrared reflection as a function of the sub-surface gallium doping concentration. The future use of the setup for nm imaging in the chemically important OH, N–H and C–H stretching vibration is discussed.
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