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Feature Article
J. Mater. Chem., 2009, 19, 849 - 857, DOI: 10.1039/b817391e
Alternative catalysts for VSS growth of silicon and germanium nanowires
Jessica L. Lensch-Falk, Eric R. Hemesath, Daniel E. Perea and Lincoln J. Lauhon
Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.
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