Issue 36, 2009
From the journal:

Journal of Materials Chemistry

Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups†

Masato Kanno,a   Yoshimasa Bando,b   Takashi Shirahata,a   Jun-ichi Inoue,a   Hiroshi Wadaa  and  Takehiko Mori*a  

* Corresponding authors

a Department of Chemistry and Materials Science, Tokyo Institute of Technology, O-okayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
E-mail: mori.t.ae@m.titech.ac.jp
Fax: +81-3-5734-2876
Tel: +81-3-5734-2427

b Department of Organic and Polymeric Materials, Tokyo Institute of Technology, O-okayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan

Abstract

Hexamethylenetetrathiafulvalene (HMTTF) derivatives substituted by tert-butyl, n-pentyl, and 1,1-dimethylpropyl groups are prepared, and the transistor properties are investigated. The compounds substituted by bulky tertiary groups exhibit high mobilities up to 0.98 cm2/Vs in the thin-film transistors and 2.3 cm2/Vs in the single-crystal transistors. At the same time these compounds realize low threshold voltages close to zero and large on–off ratios. The high mobility and the low threshold voltage are maintained more than one month in air. The single-crystal X-ray structure analyses reveal uniform stacking structures. These observations demonstrate that the low threshold voltage and the stable device performance are not solely determined by the energy levels, but are remarkably improved by the closely packed structures derived from the bulky alkyl groups.

Graphical abstract: Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups

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Article information

DOI
https://doi.org/10.1039/B907592E
Article type
Paper
Submitted
15 Apr 2009
Accepted
10 Jun 2009
First published
13 Jul 2009

J. Mater. Chem., 2009,19, 6548-6555

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Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups

M. Kanno, Y. Bando, T. Shirahata, J. Inoue, H. Wada and T. Mori, J. Mater. Chem., 2009, 19, 6548 DOI: 10.1039/B907592E

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