Hot paper: Sub 50 nm Feature Sizes using Positive Tone Molecular Glass Resists for EUV Lithography
07 February 2006
1. Could you explain the significance of your article to the non-specialist?
In 1965, Gordon Moore noted that the number of transistors on a silicon chip doubles roughly every eighteen months. Today the semiconductor industry is looking to maintain pace with this prediction. Our research focuses on the design of molecular glass resists as alternatives to conventional polymeric resists that enhance resolution and reduce line edge roughness thanks to their small molecular pixel size.
2. What has motivated you to conduct this work?
This work was motivated by the pressing need to design alternatives to polymeric resists, which today lead to high line edge roughness compared with small molecular materials.
3. Where do you see this work developing in the future?
The future will see new materials with functionalities that increase sensitivity and transparency to EUV wavelengths, as well as enhanced etch resistance.
4. Are there any particular challenges facing research in this area?
Challenges include enhanced resist sensitivity, and ultimate resolution, which we believe can be solved via the intelligent application of chemistry and materials science.
Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography
Seung Wook Chang, Ramakrishnan Ayothi, Daniel Bratton, Da Yang, Nelson Felix, Heidi B. Cao, Hai Deng and Christopher K. Ober, J. Mater. Chem., 2006, 16, 1470
DOI: 10.1039/b514065j
