Issue 7, 2009
From the journal:

Journal of Materials Chemistry

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires†

Matthias Heigoldt,‡a   Jordi Arbiol,‡*b   Danče Spirkoska,a   Josep M. Rebled,c   Sònia Conesa-Boj,c   Gerhard Abstreiter,a   Francesca Peiró,c   Joan R. Morantece  and  Anna Fontcuberta i Morral*ad  

* Corresponding authors

a Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, Garching, Germany

b TEM-MAT, Serveis Cientificotecnics, Universitat de Barcelona, C/. Lluis Sole i Sabaris 1–3, 08028 Barcelona, CAT, Spain
E-mail: arbiol@ub.edu
Web: http://nun97.el.ub.es/%E2%88%BCarbiol

c EME/XaRMAE/IN2UB, Dept. d'Electrònica, Universitat de Barcelona, C/. Marti i Franques 1, 08028 Barcelona, CAT, Spain

d Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
E-mail: anna.fontcuberta-morral@epfl.ch

e IREC, Catalonia Institute for Energy Research, Josep Pla 2, 08019 Barcelona, CAT, Spain

Abstract

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum heterostructures on the facets of the nanowires. Depending on the nanowire orientation, different geometries of the quantum heterostructures are obtained. This growth method is fully characterized by high resolution and scanning transmission electron microscopy and Z-contrast electron tomography. The growth conditions are also tuned for the optimization and homogeneity of the optical properties. The feedback of these analyses allows the tuning of the growth conditions according to the required optical properties. This work is the basis for obtaining a new generation of devices based on the heterostructures existing on the nanowire facets.

Graphical abstract: Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/B816585H
Article type
Feature Article
Submitted
22 Sep 2008
Accepted
12 Nov 2008
First published
06 Jan 2009

J. Mater. Chem., 2009,19, 840-848

Permissions

Request permissions

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiró, J. R. Morante and A. Fontcuberta i Morral, J. Mater. Chem., 2009, 19, 840 DOI: 10.1039/B816585H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements