File Name : fig_si-1.jpg
Caption : fig. si-1 tof-drs spectra recorded by 12 kev ne+ ions along the [-211] and [-101] directions at 20o incidence. the spectra with thin lines correspond to the clean surface, whereas the thicker ones to the high coverage ge layer.
File Name : fig_si-2.jpg
Caption : fig. si-2 tof-drs spectra recorded by 12 kev ne+ ions along the [-211] and [-101] directions at 5o incidence. the spectra with thin lines correspond to the clean surface, whereas the thicker ones to the high coverage ge layer.
File Name : fig_si-3.jpg
Caption : fig. si-3 leed patterns for 30 min evaporation time with sample at 470 k prior to post-annealing. electron energies were (a) 20.5 ev, (b) 35.5 ev, (c) 44.5 ev and (d) 74.5 ev.
File Name : fig_si-4.jpg
Caption : fig. si-4 leed patterns for 30 min evaporation time with sample at 470 k after annealing at 520 k. electron energies were (a) 19.5 ev, (b) 20.3 ev, (c) 35.0 ev and (d) 57.4 ev. pattern of panel (a) is slightly rotated to show (00) spot.
File Name : fig_si-5.jpg
Caption : fig. si-5 6x6 moire-type pattern observed after the depositing the ge multilayer. (a) and (b) show stm images, with the dashed red line indicating the [-101] direction. (c) 2d-fft of image (b).