File Name : figure s1.tif Caption : figure s1. tga(green)/dsc(blue) of precursor [etznoipr]4 under helium (left) and air (right). the red line represents the 1st derivative of the mass with time. File Name : figure s2.tif Caption : figure s2. xps scans of ga 2p peaks of zno (s0) and gzo (s1-s5) thin films with increasing amounts of at% ga. vertical black lines indicate the literature value of ga 2p3/2 for ga3+ in ga2o3 environment and vertical red lines indicate the literature value of ga 2p3/2 for ga0 (metal).[1] File Name : figure s3.tif Caption : figure s3. xps scans of ga 3d peaks of zno (s0) and gzo (s1-s5) thin films with increasing amounts of at% ga. vertical black lines indicate the literature value of ga 3d5/2 for ga3+ in ga2o3 environment[2] (blue rectangle shows error of 0.2 ev) and vertical red lines indicate the literature value of ga 3d3/2 for ga0 (metal).[1] File Name : figure s4.tif Caption : figure s4. texture coefficients for zno and gzo films with 0.7 – 7.0 at% ga. File Name : figure s5.tif Caption : figure s5. optical transmission and reflection spectra of undoped zno (s0) and gallium-doped zno thin films with increasing at% of ga (s1 – s5). File Name : figure s6.tif Caption : figure s6. relationship between carrier concentration (nb) and band gap enhancement of gzo, in comparison with total amounts of gallium incorporated as dopant (at% ga x ηde) for each level of at% ga. File Name : figure s7.tif Caption : figure s7. representation of eopt vs nb2/3 for thin films s0 – s5. File Name : figure s8.tif Caption : figure s8. representation of effective mass m*/m0 vs. nb2/3 for thin films s0 – s5. File Name : figure s9.tif Caption : figure s9. 1h nmr of precursor [etznoipr]4 in c6d6. File Name : figure s10.tif Caption : figure s10. 13c{1h} nmr of precursor [etznoipr]4 in c6d6. File Name : figure s11.tif Caption : figure 11. ftir of precursor [etznoipr]4. File Name : figure s12.tif Caption : figure 12. ftir of hydrolised precursor [etznoipr]4.