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Caption : fig.s1 the deposition process of the hwcvd method for depositing vgn layer.

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Caption : fig.s2 schematic diagram of the distance from the filament to the substrate surface.

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Caption : fig.s3 the regulating effect of temperature on the morphology and quality of vgn (c-si substrate): (a) sem cross-sections of vgn at 400 °c. (b) sem cross-sections of vgn at 850 °c. (c) sem cross-sections of vgn at a changing t<sub>sub</sub>. (d) raman spectra of vgn at different temperature conditions. (e) the fwhm<sub>d</sub> change curve at different temperature conditions. (f) comparison of i<sub>d</sub>/i<sub>g</sub> and i<sub>2d</sub>/i<sub>g</sub> values of vgn raman curve at different temperature conditions.

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Caption : fig.s4 the regulating effect of c<sub>2</sub>h<sub>2</sub> partial pressure on the morphology and quality of vgn: (a-b) sem cross-sectional view of vgn at the condition of partial pressure of 4% and 10%. (c) raman spectra of vgn at different c<sub>2</sub>h<sub>2</sub> partial pressure. (d) the change curve of i<sub>d</sub>/i<sub>g</sub> intensity and fwhmg at different c<sub>2</sub>h<sub>2</sub> partial pressure. (e) the change curve of i<sub>2d</sub>/i<sub>g</sub> intensity and fwhm<sub>2d</sub> at different c<sub>2</sub>h<sub>2</sub> partial pressure.

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Caption : fig.s5 vgn deposited on pyramid-textured c-si substrates with good conformal properties.

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Caption : fig.s6 the output current and voltage signals of the device prepared at the different vgn deposition parameters within 20 cycles (c<sub>2</sub>h<sub>2</sub> partial pressure were all at 6 %): (a) pressure 100 pa, tsub 750 °c. (b) pressure 800 pa, tsub 750 °c. (c) pressure 500 pa, tsub 400 °c.

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Caption : fig.s7 principle schematic diagram of droplet type hydrovoltaic power generation device

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Caption : fig.s8 the contact angle of vgn prepared on quartz glass at different deposition conditions and the intrinsic contact angle of quartz glass.

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Caption : fig.s9 effect of graphene nanowalls height on device output power: (a) contact mode at low pressure. (b) contact mode at high pressure. (c) the output power of vgn hydrovoltaic generation devices prepared at different pressure conditions.

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Caption : fig. s10 fluctuation interval of rs of vgn film prepared at different tsub and their change trend.