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Caption : crystal structures (top) and corresponding sublattice rashba spin textures (bottom) of (a) ptmn/mgo, (b) mn2au, and (c) mn2au/mgo. (a) in the ptmn/mgo heterostructure, the global isb strictly at the mgo interface induces spin textures with identical chirality and identical intensity for both mna and mnb sublattices. (b) mn2au is globally centrosymmetric (around au atom, blue dotted circle) but possesses opposite local isb at mna (red dotted circle) and mnb (purple dotted circle) sites, generating spin textures with opposite chirality but identical intensity. (c) in mn2au/mgo, the competition between the intrinsic local isb of mn2au and the extrinsic global isb from the mgo interface leads to non-equal spin textures (different chirality/intensity) between the two sublattices.

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Caption : low frequency emergent inductance when f≪fafmr under different values of η2 from -1 to +1 with fixed η1=+1.

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Caption : sot-induced sublattice magnetization precession analysis based on adiabatical assumption of effective field tracking under low frequency, small amplitude alternating electric current injection condition in identical sublattice soc situation with η1=η2=+1 (a), opposite sublattice soc situation with η1=−η2=+1 (b) and asymmetric sublattice soc situation with η1=+1, η2=0 (c). the top panel shows the initial stage of sublattice magnetization motion when hsoc,i(t) term is switched on, while the bottom panel shows the further motion of sublattice magnetization depending on whether he term is activated and the anticipated precession trajectories throughout one alternating cycle.

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Caption : macro-magnetic simulation of sot-induced néel vector n and net magnetization m precession analysis under identical sublattice soc with η1=η2=+1 ((a) and (c)), opposite sublattice soc with η1=−η2=+1 ((b) and (d)) and asymmetric sublattice soc with η1=+1 while η2=0 ((c) and (e)). je=1 ma/cm2 and f=1 ghz is absorbed, and other material parameters follow the identical value demonstrated in table i in the manuscript.

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Caption : the angular dependence of re(l) (blue curve) and im(l) (red curve) of emergent inductance along device’s transversal direction at f=10 ghz.

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Caption : comparison of eq. (4) and eq. (6) with numerical simulation results under different material parameters he (a), α (b) and hk (c). μ0he is selected to be 100 t, 200 t, 400 t, 600 t with μ0hk=0.6 t and α=0.01 in (a), α is selected to be 0.002, 0.005, 0.01, 0.02 with  μ0he=400 t and μ0hk=0.6 t in (b), μ0hk is choose to be 0.15 t, 0.3 t, 0.45 t, 0.6 t with μ0he=400 t and α=0.01 in (c). f is fixed to 100 ghz for all the situations.

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Caption : comparison of je,th predicted by first-order nonlinear approximation (1st-order approx., solid line) with the results obtained from numerical simulations (open symbols) when f varies from 1 ghz to 500 ghz (a), when μ0hk varies from 0.02 t to 1 t (b), when α varies from 0.001 to 0.1, and when μ0he varies from 11 t to 1000 t (d). for the je,th estimation under different material parameters, f is fixed to 100 ghz.

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Caption : (a) macrospin simulations of mx (black line), my (red line) and mz (blue line) for sublattice 1 in mn2au under f=100 ghz and je=40 ma∙cm−2. (b) the 2ω (red line) term and 4ω (blue line) term extracted from the fitting results of simulated trajectory m1x (black line). (c) the 1ω (red line) term and 3ω (blue line) term extracted from the fitting results of simulated trajectory m1y (black line). (d) the 1ω (red line) term and 3ω (blue line) term extracted from the fitting results of simulated trajectory m1z (black line).

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Caption : (a) amplitude ratio and phase difference between magnetization precession with 3ω harmonics and 1ω basic frequency for sublattice 1 under different current density obtained by numerical simulations. (b) simulated trajectory of m1y with the extracted 1ω and 3ω terms under a large current density je=50 ma∙cm−2 close to je,th=51.1 ma∙cm−2. f is fixed to 100 ghz for all the situations.

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Caption : the influence of magnetic field along x axis (a), y axis (b) and z axis (c) on the real part of the emergent inductance in soc-fm systems (blue line, with z axis the magnetic anisotropy axis) and soc-afm systems (red line, with x axis the magnetic anisotropy axis).

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Caption : operating mechanism of memory-inductor-integrated prototype device based on single mn2au electrode or mn2au/mgo/pt heterojunction when it works as memory functionality (a) or inductor functionality (b).