Additions and corrections

Quantitative analysis of CuIn1-xGaxSe2 thin film with fluctuation of operational parameters using laser-induced breakdown spectroscopy

Jung-Hwan In, Chan-Kyu Kim, Seok-Hee Lee, Hee-Sang Shim and Sungho Jeong

J. Anal. At. Spectrom., 2013, 28 (6), 890–900 (DOI: 10.1039/C3JA30284A). Amendment published 20th May 2013.

In Table 1, under the Concentration (at%), the name of elements (In, Ga) are missing.



The correct table is shown below.

Table 1. Concentration (95% confidence interval) of the CIGS samples measured by XRF and thicknesses measured by SEM cross-sectional image

 

Sample no.

Concentration (at%)

 

 

Cu

In

Ga

Se

Ga/(Ga+In)

CIGS

thickness (μm)

Mo thickness (μm)

1

25.63(±0.18)

18.61(±0.18)

0.54(±0.08)

55.22(±0.26)

0.028(±0.004)

 1.90

0.99

2

24.54(±0.23)

16.19(±0.15)

3.84(±0.09)

55.43(±0.27)

0.192(±0.004)

 1.70

0.99

3

23.97(±0.11)

12.79(±0.19)

8.80(±0.11)

54.44(±0.19)

0.408(±0.005)

 1.45

0.96

4

23.99(±0.13)

11.81(±0.16)

9.98(±0.21)

54.22(±0.27)

0.458(±0.007)

 1.46

0.97

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.