Photoinduced current transient spectroscopy

Definition: A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the current produced by applying an optical pulse to the semiconductor junction at different temperatures, spectra are generated which exhibit peaks, the height of which are proportional to the defect density, and the emission rate and temperature dependence are characteristic for each type of defect.

ID: CMO:0001777

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