Issue 5, 2009
From the journal:

Energy & Environmental Science

Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

Lorena Macor,a   Fernando Fungo,a   Tomas Tempesti,a   Edgardo N. Durantini,a   Luis Otero,*a   Eva M. Barea,b   Francisco Fabregat-Santiagob  and  Juan Bisquert*b  

* Corresponding authors

a Departamento de Química, Universidad Nacional de Río Cuarto, Agencia Postal 3, Río Cuarto, Argentina
E-mail: lotero@exa.unrc.edu.ar

b Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, Castelló, Spain
E-mail: bisquert@fca.uji.es

Abstract

Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at λ ∼ 790 nm.

Graphical abstract: Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

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Article information

DOI
https://doi.org/10.1039/B822954F
Article type
Paper
Submitted
19 Dec 2008
Accepted
26 Feb 2009
First published
13 Mar 2009

Energy Environ. Sci., 2009,2, 529-534

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Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

L. Macor, F. Fungo, T. Tempesti, E. N. Durantini, L. Otero, E. M. Barea, F. Fabregat-Santiago and J. Bisquert, Energy Environ. Sci., 2009, 2, 529 DOI: 10.1039/B822954F

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