Issue 45, 2005
From the journal:

Journal of Materials Chemistry

Strain induced photoluminescence from silicon and germanium nanowire arrays

Guillaume Audoit,a   Éimhín Ní Mhuircheartaigh,b   Stephen M. Lipson,b   Michael A. Morris,a   Werner J. Blaub  and  Justin D. Holmes*a  

* Corresponding authors

a Department of Chemistry, Materials Section and Supercritical Fluid Centre, University College Cork, Cork, Ireland
E-mail: j.holmes@ucc.ie
Fax: +353 (0)21 4274097
Tel: +353 (0)21 4903608

b Materials Ireland Polymer Research Centre, Department of Physics Trinity College Dublin, Dublin 2, Ireland

Abstract

The optical properties of silicon and germanium nanowires grown within the pores of hexagonal mesoporous silica matrices have been characterised by ultraviolet absorption and photoluminescence (PL) spectroscopy. A clear blue-shift in the PL of the semiconductor composite materials was observed as the diameter of the nanowires decreased from 85 to 22 Å. Powder X-ray diffraction revealed that, as the diameter of the confined nanowires decreased, the strain on the crystallographic structure of the nanowires increased, due to escalating lattice expansion, resulting in a shift in the PL maximum to higher energies. The ability to manipulate the optical properties in templated semiconductor nanowires, through strain engineering, has important implications for the design of future optical devices.

Graphical abstract: Strain induced photoluminescence from silicon and germanium nanowire arrays

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Article information

DOI
https://doi.org/10.1039/B510532C
Article type
Paper
Submitted
22 Jul 2005
Accepted
07 Sep 2005
First published
29 Sep 2005

J. Mater. Chem., 2005,15, 4809-4815

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Strain induced photoluminescence from silicon and germanium nanowire arrays

G. Audoit, É. N. Mhuircheartaigh, S. M. Lipson, M. A. Morris, W. J. Blau and J. D. Holmes, J. Mater. Chem., 2005, 15, 4809 DOI: 10.1039/B510532C

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