Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
Abstract
The location of Ge-doped Bi4V2O11 solid solutions in the Bi2O3–V2O5–GeO2 ternary phase diagram has been determined; a more detailed study of the Bi4V2O11–Bi2GeO5 join has been carried out and the phase diagram presented. The main mechanisms for solid solution formation appear to involve substitution of both Ge and Bi into V sites, giving rise to the general formula Bi4+yV2 – 2x–yGe2xO11–x–y:–0.04<y<0.23; 0<x <0.45 (not all values of x and y in these ranges). Conductivity of the α and γ polymorphs both on and off the Bi4V2O11–Bi2GeO5 join generally decreases with increasing x after an initial increase. In addition, conductivity of the γ polymorph decreases with increasing Bi2O3 content, y; the highest conductivity was obtained at x= 0.305 and y= 0.07.
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