Issue 6, 2009
From the journal:

New Journal of Chemistry

Metal atom behavior on photochromic diarylethene surfaces—deposition rate dependence of selective Mg deposition

Tsuyoshi Tsujioka,*a   Yusuke Sesumi,a   Satoshi Yokojima,b   Shinichiro Nakamurab  and  Kingo Uchidac  

* Corresponding authors

a Department of Arts and Sciences, Osaka Kyoiku University, Asahigaoka 4-698-1, Kashiwara, Japan
E-mail: tsujioka@cc.osaka-kyoiku.ac.jp
Fax: +81 72-978-3633
Tel: +81 72-978-3633

b Mitsubishi Chemical Group Science and Technology Research Center Inc., Kamoshida 1000, Aoba-ku Yokohama, Japan

c Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Japan

Abstract

Selective Mg metal deposition based on the isomerization of a photochromic diarylethene (DAE) showed a threshold in the isomerization ratio. The deposition threshold was shifted to the uncolored side with an increase in the rate of Mg deposition. The size of the Mg crystals at the threshold, which reflect the migration length of the Mg atoms on the surface, changed, depending on the deposition rate. Relatively small crystals were formed on the uncolored surface at the threshold obtained by an increasing deposition rate, indicating a short migration length. The occurrence of selective deposition was determined by the concentration and migration of Mg atoms, which were found to be the most important factors affecting the formation of the Mg film on the DAE surface, and therefore determining the occurrence of selective metal deposition.

Graphical abstract: Metal atom behavior on photochromic diarylethene surfaces—deposition rate dependence of selective Mg deposition

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Article information

DOI
https://doi.org/10.1039/B823040D
Article type
Letter
Submitted
24 Dec 2008
Accepted
25 Feb 2009
First published
05 Mar 2009

New J. Chem., 2009,33, 1335-1338

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Metal atom behavior on photochromic diarylethene surfaces—deposition rate dependence of selective Mg deposition

T. Tsujioka, Y. Sesumi, S. Yokojima, S. Nakamura and K. Uchida, New J. Chem., 2009, 33, 1335 DOI: 10.1039/B823040D

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